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Boeing Widebodies (Enthusiast Color Series) by Michael Haenggi

By Michael Haenggi

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Status Solidi (a) 37 (1976) K 157. : Sov. Phys. Semicond. 11 (1977) 1069. : J. Lumin. 15 (1977) 299. : J. Electrochem. Soc. 124 (1977) 241. : Sov. Phys. Semicond. 11 (1977) 214. : Phys. Rev. B 22 (1980) 2842. : Sov. Phys. Semicond. 19 (1985) 69. : Sov. Phys. Semicond. 20 (1986) 462. : Appl. Phys. Lett. 49 (1986) 584. : Appl. Phys. Lett. 49 (1986) 450. : Sov. Phys. Solid State 28 (1986) 917. : Mater. Res. Soc. Symp. Proc. 97 (1987) 195. : J. Appl. Phys. 61 (1987) 599. : ECS, Extended Abstracts 89-2 (1989) 714.

4. Temperature dependence of the effective density-of-states mass md* , e for electrons in 4H/6H–SiC (calculated after [97S, 97W]). 35 0 200 400 600 Temperature T [K] 800 1000 Fig. 5. Al ionization energy ∆E(Al) as a function of the Al concentration N(Al) for different degrees of compensation K. The symbols are experimental data, the solid/dashed curves are calculated after [80S]; (taken from [96S]). 5 16 10 17 18 19 10 10 10–3 Concentration NAl [cm ] 20 10 21 10 Fig. 6. Degree of ionization I = (NA− – Ncomp)/(NA – Ncomp) as a function of the temperature for Al and B acceptors in SiC.

IR absorption spectra of a nitrogen-doped 3C–SiC sample taken at T = 7K and T = 80K. 9meV [96P2]. 16 3C-SiC : N 14 T=7K 12 2p0 314 Transmittance T [%] 10 381 2p± 354 404 415 8 T = 80 K 247 6 411 420 4p± 5p± 4 286 2 0 200 399 3p± 240 280 320 360 –1 Wave number ν [cm ] 400 440 480 500 Fig. 2. Hall scattering factor rH,e vs. 741T. The net doping concentration ND–NA of samples A to E varies from 7x1015cm–3 to 8x1016cm–3 [98R]. 90 40 50 60 70 80 100 Temperature T [K] 200 300 Fig. 3. Temperature dependence of the degeneracy factor gi for N donors at hexagonal and cubic lattice sites incorporated in the 4H, 6H and 15R polytype.

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